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| STW80NF55-06 N-CHANNEL 55V - 0.005 - 80A TO-247 STripFETTM II POWER MOSFET PRELIMINARY DATA TYPE STW80NF55-06 s s s VDSS 55 V RDS(on) < 0.0065 ID 80 A TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 2 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC-AC & DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (*) ID IDM (q) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 20 80 80 320 300 2 1 - 55 to 175 Unit V V V A A A W W/C J C (q) Pulse width limited by safe operating area (1) Starting T j = 25C, I D = 40A, VDD = 40V (*) Current Limited by wire bonding October 2001 1/6 STW80NF55-06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.5 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 55 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 40 A Min. 2 Typ. 3 0.005 Max. 4 0.0065 Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > 15 V, ID = 40 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 50 7300 980 250 Max. Unit S pF pF pF 2/6 STW80NF55-06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 27.5 V, ID = 40A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 44 V, ID = 80 A, VGS = 10 V Min. Typ. 40 240 190 40 65 230 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf td(off) tr(Voff) tf tc Parameter Turn-off-Delay Time Fall Time Off-voltage Rise Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 27.5 V, ID = 40A, RG = 4.7, VGS = 10V (see test circuit, Figure 3) Vclamp = 44 V, ID =80A RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 260 75 70 185 240 110 Max. Unit ns ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80A, VGS = 0 ISD = 80 A, di/dt = 100A/s, VDD = 20V, Tj = 150C (see test circuit, Figure 5) 90 0.295 6.5 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STW80NF55-06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STW80NF55-06 TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 0.40 1 3 2 2 3 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2 5 60 3.55 3.65 0.14 3 0.07 5 60 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 TYP MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05 DIM. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Dia 5/6 STW80NF55-06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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